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First-principles computational study of defect clustering in solid solutions of ThO$_{2}$ with trivalent oxides

机译:固体缺陷聚类的第一性原理计算研究   含有三价氧化物的ThO $ _ {2} $的解决方案

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摘要

The energetics of mixing and defect ordering in solid solutions offluorite-structured ThO$_{2}$ with oxides of trivalent cations (Sc, In, Y, Nd,La) are investigated by electronic density-functional-theory (DFT). Through DFTcalculations of structures enumerated by lattice-algebra techniques, weidentify the lowest-energy patterns for defect clustering for four separatedopant concentrations. The most stable structures are characterized by arepulsive interaction between nearest-neighbor vacancies on the oxygensublattice. The enthalpies of formation with respect to constituent oxides arepositive for all dopants considered, and show a tendency to decrease inmagnitude as the size and electronegativity of the trivalent dopant decrease.Due to the small positive formation enthalpies and low oxygen-vacancy bindingenergy with La dopants, La$_{2}$O$_{3}$-ThO$_{2}$ solid solutions are predictedto have relatively high ionic conductivities relative to those for the otheraliovalent dopants considered. Our results are compared with those for the morewidely studied ZrO$_{2}$ and CeO$_{2}$ fluorite-structured solid solutions withtrivalent cations.
机译:通过电子密度泛函理论(DFT)研究了萤石结构的ThO $ _ {2} $与三价阳离子(Sc,In,Y,Nd,La)氧化物在固溶体中混合和缺陷排序的能级。通过点阵代数技术枚举的结构的DFT计算,我们确定了四种不同浓度的缺陷聚集的最低能量模式。最稳定的结构的特征是氧亚晶格上最邻近的空位之间存在脉冲相互作用。对于所考虑的所有掺杂剂,与组成氧化物有关的形成焓均为正值,并且随着三价掺杂剂的尺寸和电负性的降低而呈现出减小的趋势。由于La掺杂剂的正形成焓小且氧空位结合能低, La $ _ {2} $ O $ _ {3} $-ThO $ _ {2} $固溶体预计相对于所考虑的其他alalvalent掺杂剂具有相对较高的离子电导率。将我们的结果与更广泛研究的具有三价阳离子的ZrO $ _ {2} $和CeO $ _ {{2} $萤石结构固溶体的结果进行比较。

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